FEATURES

D TrenchFETr Power MOSFET

D PWM Optimized

D New Low Thermal Resistance PowerPAKt Package with

Low 1.07-mm Profile

APPLICATIONS

D DC/DC Converters

–

Low-Side MOSFET in Synchronous Buck in Desktops

D Secondary Synchronous Rectifier

Si7880DP

Vishay Siliconix

New Product

Document Number: 71875

S-20919—Rev. A, 01-Jul-02

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

29

30

25

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

6.15 mm

5.15 mm

PowerPAK

t SO-8

Bottom View

N-Channel MOSFET

G

D

S

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

30

Gate-Source Voltage

"20

V

_

29

18

25

14

Pulsed Drain Current (10

ms Pulse Width)

60

A

4.5

1.6

5.4

1.9

3.4

1.2

W

Operating Junction and Storage Temperature Range

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 10 sec

18

23

Steady State

50

65

_C/W

Maximum Junction-to-Case (Drain)

Steady State

1.0

1.5

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.