71875 datasheet(2/5 Pages) VISHAY

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Si7880DP

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71875

S-20919—Rev. A, 01-Jul-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

3.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 24 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 55_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 29 A

0.0025

0.0030

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 25 A

0.0035

0.00425

Forward Transconductancea

gfs

VDS = 6 V, ID = 29 A

Diode Forward Voltagea

VSD

IS = 4.5 A, VGS = 0 V

0.68

1.1

Dynamicb

Total Gate Charge

40.5

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 29 A

Gate-Drain Charge

Qgd

10.5

Gate Resistance

1.2

Turn-On Delay Time

td(on)

Rise Time

VDD = 15 V, RL = 15 W

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

110

200

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 2.9 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

012345

VGS = 10 thru 4 V

TC = 125_C

–55

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

3 V

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