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TMS44100P Datasheet(PDF) 8 Page - Texas Instruments

Part # TMS44100P
Description  4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES
PDF  25 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS44100P Datasheet(HTML) 8 Page - Texas Instruments

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TMS44100, TMS44100P, TMS46100, TMS46100P
4194304-WORD BY 1-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS561A – MARCH 1995 – REVISED JUNE 1995
8
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 6)
PARAMETER
MIN
MAX
UNIT
Ci(A)
Input capacitance, A0 – A10
5
pF
Ci(RC)
Input capacitance, CAS and RAS
7
pF
Ci(W)
Input capacitance, W
7
pF
Co
Output capacitance
7
pF
NOTE 6: VCC = 5 V ± .5 V for the TMS44100 devices, VCC = 3.3 V ± 0.3 V for the TMS46100 devices, and the bias on pins under test is 0 V.
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
’4x100 - 60
’4x100P - 60
’4x100 - 70
’4x100P - 70
’4x100 - 80
’4x100P - 80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tAA
Access time from column address
30
35
40
ns
tCAC
Access time from CAS low
15
18
20
ns
tCPA
Access time from column precharge
35
40
45
ns
tRAC
Access time from RAS low
60
70
80
ns
tCLZ
CAS to output in low impedance
0
0
0
ns
tOFF
Output disable time after CAS high (see Note 7)
0
15
0
18
0
20
ns
NOTE 7: tOFF is specified when the output is no longer driven.



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