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TMS44100P Datasheet(PDF) 16 Page - Texas Instruments |
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TMS44100P Datasheet(HTML) 16 Page - Texas Instruments |
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16 / 25 page ![]() TMS44100, TMS44100P, TMS46100, TMS46100P 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS561A – MARCH 1995 – REVISED JUNE 1995 16 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS CAS A0 – A10 W Q D Row Column Don’t Care See Note A See Note A Valid Data In tRP Valid Data In Don’t Care Hi-Z Don’t Care Don’t Care Don’t Care Column tRASP tCSH tPC tCRP tRSH tCAS tRCD tASC tRAH tCAH tCP tASR tRAD tCWL tWP tCWL tRWL tDH tDH (see Note A) tDS tDS tRAL tAR tDHR tWCR See Note A tCAL NOTES: A. Referenced to CAS or W, whichever occurs last B. A read cycle or a read-write cycle can be intermixed with write cycles as long as read and read-write timing specifications are not violated. Figure 8. Enhanced-Page-Mode Write-Cycle Timing |
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