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T0516ST Datasheet(PDF) 2 Page - Chip Integration Technology Corporation |
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T0516ST Datasheet(HTML) 2 Page - Chip Integration Technology Corporation |
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2 / 7 page ![]() 2 Absolute Maximum Rating Symbol Parameter Value Units VESD ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) ±25 ± 17 kV TOPT Operating Temperature -55 / +125 o C TSTG Storage Temperature C Electrical Characteristics (T=25 C) Symbol Parameter VRWM Nominal Reverse Working Voltage IR Reverse Leakage Vurrent @ VRWM VBR Reverse Bearkdown Voltage @ IT IT Test Current for Reverse Breakdown VC Clamping Voltage @ I PP IPP Maximum Peak Pulse Current CESD Parasitic Capacitance VR Reverse Voltage f Small Signal Frequency IF Forward Current VF Forward Voltage @ I F Voltage Current VF IF VRWM VBR VC IPP IR IT Uni-Directional TVS Symbol Test Condition Minimum Typical Maximum Units VRWM 5.0 V IR VRWM = 5V, T = 25 C Between Any Pin and GND 0.1 1.0 μA VBR IT = 1mA Between Any Pin and GND 6.0 8.0 10.0 V VC IPP = 1A, tp= 8/20μs Between Any Pin and GND 12 V CESD VR = 0V, f = 1MHz Between Any Pin and GND 0.5 pF CESD VR = 0V, f = 1MHz Between I/O and I/O 0.1 pF -55 / +150 o o o T0516ST Chip Integration Technology Corporation Document ID : DS-22V08 Revised Date : 2016/08/29 Revision : C Ultra-Low Capacitance ESD Protection Device |
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