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LTC3413 Datasheet(PDF) 10 Page - Linear Technology |
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LTC3413 Datasheet(HTML) 10 Page - Linear Technology |
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10 / 16 page ![]() 10 LTC3413 sn3413 3413fs high to low to high again, a packet of charge dQ moves from VIN to ground. The resulting dQ/dt is the current out of VIN that is typically larger than the DC bias current. In continuous mode, IGATECHG = f(QT + QB) where QT and QB are the gate charges of the internal top and bottom switches. Both the DC bias and gate charge losses are proportional to VIN and thus their effects will be more pronounced at higher supply voltages. 2. I2R losses are calculated from the resistances of the internal switches, RSW, and external inductor RL. In con- tinuous mode the average output current flowing through inductor L is “chopped” between the main switch and the synchronous switch. Thus, the series resistance looking into the SW pin is a function of both top and bottom MOSFET RDS(ON) and the duty cycle (DC) as follows: RSW = (RDS(ON)TOP)(DC) + (RDS(ON)BOT)(1 – DC) The RDS(ON) for both the top and bottom MOSFETs can be obtained from the Typical Performance Characteristics curves. Thus, to obtain I2R losses, simply add RSW to RL and multiply the result by the square of the average output current. Other losses including CIN and COUT ESR dissipative losses and inductor core losses generally account for less than 2% of the total loss. Thermal Considerations In most applications, the LTC3413 does not dissipate much heat due to its high efficiency. But, in applications where the LTC3413 is running at high ambient temperature with low supply voltage and high duty cycles, such as in dropout, the heat dissipated may exceed the maximum junction temperature of the part. If the junction temperature reaches approximately 150 °C, both power switches will be turned off and the SW node will become high impedance. To avoid the LTC3413 from exceeding the maximum junction temperature, the user will need to do some thermal analysis. The goal of the thermal analysis is to determine whether the power dissipated exceeds the maximum junction temperature of the part. The tempera- ture rise is given by: TR = (PD)(θJA) where PD is the power dissipated by the regulator and θJA is the thermal resistance from the junction of the die to the ambient temperature. The junction temperature, TJ, is given by: TJ = TA + TR where TA is the ambient temperature. As an example, consider the LTC3413 in dropout at an input voltage of 3.3V, a load current of 3A and an ambient temperature of 70 °C. From the Typical Performance graph of switch resistance, the RDS(ON) of the P-channel switch at 70 °C is approximately 97mΩ. Therefore, power dissi- pated by the part is: PD = (ILOAD2)(RDS(ON)) = (3A)2(97mΩ) = 0.87W For the TSSOP package, the θJA is 38°C/W. Thus the junction temperature of the regulator is: TJ = 70°C + (0.87W)(38°C/W) = 103°C which is below the maximum junction temperature of APPLICATIO S I FOR ATIO |
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