AC08FSM datasheet(126/223 Pages) TECCOR

126 / 223 page

AN1001

Application Notes

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Thyristor Product Catalog

Critical Rate-of-rise of Off-state Voltage or Static dv/dt

(dv/dt) – Minimum value of the rate-of-rise of principal voltage

which will cause switching from the off state to the on state

Critical Rate-of-rise of On-state Current (di/dt) – Maximum

value of the rate-of-rise of on-state current that a thyristor can

withstand without harmful effect

Gate-controlled Turn-on Time (tgt) – Time interval between a

specified point at the beginning of the gate pulse and the instant

when the principal voltage (current) has dropped to a specified

low value (or risen to a specified high value) during switching of a

thyristor from off state to the on state by a gate pulse.

Gate Trigger Current (IGT) – Minimum gate current required to

maintain the thyristor in the on state

Gate Trigger Voltage (VGT) – Gate voltage required to produce

the gate trigger current

Holding Current (IH) – Minimum principal current required to

maintain the thyristor in the on state

Latching Current (IL) – Minimum principal current required to

maintain the thyristor in the on state immediately after the switch-

ing from off state to on state has occurred and the triggering sig-

nal has been removed

On-state Current (IT) – Principal current when the thyristor is in

the on state

On-state Voltage (VT) – Principal voltage when the thyristor is in

the on state

Peak Gate Power Dissipation (PGM) – Maximum power which

may be dissipated between the gate and main terminal 1 (or

cathode) for a specified time duration

Repetitive Peak Off-state Current (IDRM) – Maximum instanta-

neous value of the off-state current that results from the applica-

tion of repetitive peak off-state voltage

Repetitive Peak Off-state Voltage (VDRM) – Maximum instanta-

neous value of the off-state voltage which occurs across a thyris-

tor, including all repetitive transient voltages and excluding all

non-repetitive transient voltages

Repetitive Peak Reverse Current of an SCR (IRRM) – Maximum

instantaneous value of the reverse current resulting from the

application of repetitive peak reverse voltage

Repetitive Peak Reverse Voltage of an SCR (VRRM) – Maximum

instantaneous value of the reverse voltage which occurs across

the thyristor, including all repetitive transient voltages and exclud-

ing all non-repetitive transient voltages

Surge (Non-repetitive) On-state Current (ITSM) – On-state cur-

rent of short-time duration and specified waveshape

Thermal Resistance, Junction to Ambient (RθJA) – Temperature

difference between the thyristor junction and ambient divided by

the power dissipation causing the temperature difference under

conditions of thermal equilibrium

Note: Ambient is the point at which temperature does not change

as the result of dissipation.

Thermal Resistance, Junction to Case (RθJC) – Temperature dif-

ference between the thyristor junction and the thyristor case

divided by the power dissipation causing the temperature differ-

ence under conditions of thermal equilibrium

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