TC2001 datasheet(10/34 Pages) TRIPATH

10 / 34 page

Tr i p ath Technol ogy, I n c. - Techni cal I n for m ati on

TK2150 – Rev. 1.0/12.02

External Components Description (Refer to the Application/Test Circuit)

Components Description

Inverting input resistance to provide AC gain in conjunction with RF. This input is

biased at the BIASCAP voltage (approximately 2.5VDC).

Feedback resistor to set AC gain in conjunction with RI. Please refer to the Amplifier

Gain paragraph, in the Application Information section.

AC input coupling capacitor which, in conjunction with RI, forms a highpass filter at

)

(

RFBA

Feedback divider resistor connected to V5. This resistor is normally set at 1k

Ω.

RFBB

Feedback divider resistor connected to AGND. This value of this resistor depends

on the supply voltage setting and helps set the TK2150 gain in conjunction with RI,

RF, RFBA, and RFBC. Please see the Modulator Feedback Design paragraphs in the

Application Information Section.

RFBC

Feedback resistor connected from either the OUT1(OUT2) to FBKOUT1(FBKOUT2)

or speaker ground to FBKGND1(FBKGND2). The value of this resistor depends on

the supply voltage setting and helps set the TK2150 gain in conjunction with RI, RF,

RFBA,, and RFBB. It should be noted that the resistor from OUT1(OUT2) to

FBKOUT1(FBKOUT2) must have a power rating of greater than

)

(2R

VPP

FBC

DISS =

Please see the Modulator Feedback Design paragraphs in the Application

Information Section.

CFB

Feedback delay capacitor that both lowers the idle switching frequency and filters

very high frequency noise from the feedback signal, which improves amplifier

performance. The value of CFB should be offset between channel 1 and channel 2

so that the idle switching difference is greater than 40kHz. Please refer to the

Application / Test Circuit.

ROFA

Potentiometer used to manually trim the DC offset on the output of the TK2350.

ROFB

Resistor that limits the manual DC offset trim range and allows for more precise

adjustment.

RREF

Bias resistor. Locate close to pin 15 of the TC2001 and ground at pin 20 of the

TC2001.

BIASCAP decoupling capacitor. Should be located close to pin 1 of the TC2001 and

grounded at pin 20 of the TC2001.

Bootstrap diode. This diode charges up the bootstrap capacitors when the output is

low (at VNN) to drive the high side gate circuitry. A fast or ultra fast recovery diode

is recommended for the bootstrap circuitry. In addition, the bootstrap diode must be

able to sustain the entire VPP-VNN voltage. Thus, for most applications, a 150V (or

greater) diode should be used.

High frequency bootstrap capacitor, which filters the high side gate drive supply.

This capacitor must be located as close to VBOOT1 (pin 57 of the TP2150) or

VBOOT2 (pin 27 of the TP2150) for reliable operation. The “negative” side of CB

should be connected directly to the HO1COM (pin 47 of the TP2150) or HO2COM

(pin 37 of the TP2150). Please refer to the Application / Test Circuit.

CBAUX

Bulk bootstrap capacitor that supplements CB during “clipping” events, which result

in a reduction in the average switching frequency.

Bootstrap resistor that limits CBAUX charging current during TK2150 power up

(bootstrap supply charging).

Supply decoupling for the power supply pins. For optimum performance, these

components should be located close to the TC2001 and TP2150 and returned to

their respective ground as shown in the Application/Test Circuit.

RVNN1

Main overvoltage and undervoltage sense resistor for the negative supply (VNN).

Please refer to the Electrical Characteristics Section for the trip points as well as the

hysteresis band. Also, please refer to the Over / Under-voltage Protection section in

the Application Information for a detailed discussion of the internal circuit operation

and external component selection.

RVNN2

Secondary overvoltage and undervoltage sense resistor for the negative supply

(VNN). This resistor accounts for the internal VNNSENSE bias of 1.25V. Nominal

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