2SB1691 datasheet(1/5 Pages) RENESAS

Part #	2SB1691

Description	Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

PDF	5 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Rev.2.00, Dec.09.2004, page 1 of 4

2SB1691

Silicon PNP Epitaxial Planer

Low Frequency Power Amplifier

REJ03G0482-0200

(Previous ADE-208-1387A (Z))

Rev.2.00

Dec.09.2004

Features

• Small size package: MPAK (SC–59A)

• Large Maximum current: I

C = –1 A

• Low collector to emitter saturation voltage: V

CE(sat) = –0.3 V max.(at IC/IB = –0.5 A/–0.05 A)

• High power dissipation: P

C = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))

• Complementary pair with 2SD2655

Outline

1

2

3

1. Emitter

2. Base

3. Collector

MPAK

Note:

Marking is “WL-“.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base Voltage

VCBO

−60

V

Collector to emitter voltage

VCEO

−50

V

Emitter to base voltage

VEBO

–6

V

Collector current

IC

–1

A

Collector peak current

ic(peak)

–2

A

Collector power dissipation

PC

800*

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Note:

*When using alumina ceramic board (25 x 60 x 0.7 mm)

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