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2SB1691 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # 2SB1691
Description  Silicon PNP Epitaxial Planer Low Frequency Power Amplifier
PDF  5 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SB1691 Datasheet(HTML) 2 Page - Renesas Technology Corp

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2SB1691
Rev.2.00, Dec.09.2004, page 2 of 4
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Collector to base breakdown voltage
V(BR)CBO
–60
V
IC = –10
µA, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–50
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–6
V
IE = –10
µA, IC = 0
Collector cutoff current
ICBO
–100
nA
VCB = –50 V, IE = 0
Emitter cutoff current
IEBO
–100
nA
VEB = –5 V, IC = 0
DC current transfer ratio
hFE
200
500
VCE = –2 V, IC = –0.1 A
Collector to emitter saturation voltage
VCE(sat)
–0.2
–0.3
V
IC = –0.5 A, IB = –0.05 A,
Pulse test
Base to emitter saturation voltage
VBE(sat)
–0.95
–1.2
V
IC = –0.5 A, IB = –0.05 A,
Pulse test
Gain bandwidth product
fT
310
MHz
VCE = –2 V, IC = –0.1 A
Collector output capacitance
Cob
9.8
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Main Characteristics
0
50
100
150
200
Maximum Collector Dissipation Curve
–0.6
–10
–100
–1
0
–0.8
Base to Emitter Voltage
VBE (V)
Typical Transfer Characteristics
–0.2
–0.4
–1.0
0
–1.2
–0.8
0–2
–4
–6
Typical Output Characteristics (1)
Ambient Temperature
Ta (
°C)
Collector to Emitter Voltage
VCE (V)
Collector to Emitter Voltage
VCE (V)
–0.4
–1.6
–8
1200
1000
800
400
200
–10
–100
–200
Pulse
Typical Output Characteristics (2)
Pulse
–1000
VCE = –2 V
Pulse
–250
µA
–200
µA
–150
µA
–100 µ
A
–300
µA
IB = –50 µA
–350
µA
–2.0
IB = –1
mA
–2 mA
–3 mA
–4
mA
–5
mA
–6
mA
–100
–200
–300
–400
–500
When using alumina ceramic board
S = 25 mm x 60 mm, t = 0.7 mm



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