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DS1387 Datasheet(PDF) 16 Page - Dallas Semiconductor |
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DS1387 Datasheet(HTML) 16 Page - Dallas Semiconductor |
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16 / 20 page ![]() DS1385/DS1387 012496 16/20 POWER–DOWN CONDITION VIH tPF tF tDR tFB VBAT 4.5V 4.25V 4.0V POWER FAIL CE VCC POWER–UP POWER–DOWN TIMING (tA = 25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CE High to Power Fail tPF 0 ns Recovery at Power Up tREC 150 ms VCC Slew Rate Power Down tF 4.0 <VCC < 4.5V 300 µs VCC Slew Rate Power Down tFB 3.0 <VCC< 4.0V 10 µs VCC Slew Rate Power Up tR 4.5V>VCC>4.0V 0 µs Expected Data Retention tDR 10 years 8 WARNING: Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery back–up mode. CAPACITANCE (tA = 25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance CIN 12 pF Output Capacitance COUT 12 pF |
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