Philips Semiconductors

PSMN004-36P/36B

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 19 November 2001

6 of 13

9397 750 08621

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ag45

0

20

40

60

80

0

0.2

0.4

0.6

0.8

1

VDS (V)

ID

(A)

2.4 V

Tj = 25 ºC

VGS = 2 V

2.8 V

2.6 V

10 V

2.2 V

5 V

03ag47

0

20

40

60

80

-0.2

0.6

1.4

2.2

3

VGS (V)

ID

(A)

VDS > ID x RDS(ON)

Tj = 25 ºC

175 ºC

03ag46

0

0.002

0.004

0.006

0.008

0.01

0

20406080

ID (A)

RDS(on)

(

Ω)

VGS = 2.6V

Tj = 25 ºC

10 V

5 V

2.8 V

03aa27

0

0.4

0.8

1.2

1.6

2

-60

0

60

120

180

Tj (

a

a

R

DSon

R

DSon 25 C

°

()

-----------------------------

=