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PSMN004-36P Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN004-36P Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 13 page ![]() Philips Semiconductors PSMN004-36P/36B N-channel enhancement mode field-effect transistor Product data Rev. 01 — 19 November 2001 8 of 13 9397 750 08621 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Tj =25 °C and 175 °C; VGS =0V ID = 75 A; VDD = 15 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 03ag48 0 20 40 60 80 0 0.4 0.8 1.2 VSD (V) IS (A) Tj = 25 ºC 175 ºC VGS = 0 V 03ag50 0 2 4 6 8 10 0 40 80 120 160 200 QG (nC) VGS (V) ID = 75 A Tj = 25 ºC VDD = 15 V |
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