Philips Semiconductors

PSMN004-36P/36B

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 19 November 2001

3 of 13

9397 750 08621

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa16

0

40

80

120

0

50

100

150

200

Tmb (

Pder

(%)

03ag42

0

40

80

120

0

50

100

150

200

Tmb (ºC)

ID

(%)

P

der

P

tot

P

tot 25 C

°

()

-----------------------

100%

×

=

I

der

I

D

I

D25 C

°

()

-------------------

100%

×

=

03ag44

1

10

102

103

1

10

102

VDS (V)

ID

(A)

DC

100 ms

10 ms

RDS(on) = VDS/ ID

1 ms

tp = 10 us

100 us