Philips Semiconductors

PSMN004-36P/36B

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 19 November 2001

2 of 13

9397 750 08621

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

−

36

V

drain current (DC)

−

75

A

total power dissipation

−

230

W

junction temperature

−

175

°C

drain-source on-state resistance

3.5

4

m

Ω

45m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

−

36

V

drain-gate voltage (DC)

36

V

gate-source voltage (DC)

−±15

V

gate-source voltage

−±20

V

drain current (DC)

−

75

A

−

75

A

peak drain current

−

240

A

total power dissipation

−

230

W

storage temperature

−55

+175

°C

operating junction temperature

−55

+175

°C

Source-drain diode

source (diode forward) current (DC)

−

75

A

−

240

A

Avalanche ruggedness

non-repetitive avalanche energy

unclamped inductive load;

−

120

mJ

non-repetitive avalanche current

unclamped inductive load;

−

75

A