Philips Semiconductors

PSMN004-36P/36B

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 19 November 2001

7 of 13

9397 750 08621

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

03aa33

0

0.5

1

1.5

2

2.5

-60

0

60

120

180

Tj (

VGS(th)

(V)

max

typ

min

03aa36

10-6

10-5

10-4

10-3

10-2

10-1

0

0.5

1

1.5

2

2.5

3

(A)

max

typ

min

03ag49

103

104

105

10-1

1

10

102

VDS (V)

C

(pF)

Ciss

Crss

Coss