CS1680 datasheet(6/16 Pages) CIRRUS

6 / 16 page

CS1680

DS1055F1

Notes:

1. Threshold is characterized as a percentage of the full-scale boost output voltage, VBST(full)

2. The CS1680 has an internal shunt regulator that limits the voltage on the VDD pin. VZ, the shunt regulation voltage, is defined in

the VDD Supply Voltage section on page 4.

3. For test purposes, load capacitance CL is connected to gate drive pins and is equal to 0.25nF.

4. Mode1 algorithm regulates value at the trough of the rectified waveform.

5. Mode2 algorithm regulates boost output voltage at the phase cut of each rectified waveform.

6. LED output current begins changing if boost output voltage is outside the Mode3 algorithm regulation range.

7. Accelerated increase in LED output current begins at clamp on and continues until the boost output voltage falls to clamp off.

8. External circuitry should be designed to ensure that the ZCD current drawn from the internal clamp diode when it is forward biased

does not exceed specification.

9. The conductance is specified in Siemens (S or 1/

). Each LSB of the internal ADC corresponds to 250nS or one parallel 4M

resistor. Full scale corresponds to 256 parallel 4M

 resistors or 15.625k.

10.

Specifications are guaranteed by design and are characterized and correlated using statistical process methods.

3.2 Thermal Resistance

3.3 Absolute Maximum Ratings

Characteristics conditions:

All voltages are measured with respect to GND.

Note:

11.

Transient current of up to 170mA will not cause SCR latch-up

12.

Long-term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation at

the rate of 50 mW /°C for variation over temperature.

WARNING:

Operation at or beyond these limits may result in permanent damage to the device.

Normal operation is not guaranteed at these extremes.

Internal Overtemperature Protection (iOTP)

Thermal Shutdown Threshold

(Note 10)

TSD

135

ºC

Thermal Shutdown Hysteresis

(Note 10)

TSD(Hy)

-14

ºC

Symbol

Parameter

TSSOP

Unit



Junction-to-Ambient Thermal Impedance

2 Layer PCB

4 Layer PCB

138

103

°C/W



Junction-to-Case Thermal Impedance

2 Layer PCB

4 Layer PCB

°C/W

Symbol

Parameter

Value

Unit

6VDD

IC Supply Voltage

18.5

1, 2, 3, 8, 9,

10, 13, 14, 15, 16

Analog Input Maximum Voltage

-0.5 to (VDD+0.5)

1, 2, 3, 8, 9,

10, 13, 14, 15, 16

Analog Input Maximum Current

(Note 11)

5mA

5, 11, 12

VGD

Gate Drive Output Voltage

-0.3 to (VDD+0.3)

5, 11, 12

IGD

Gate Drive Output Current

-1.0 / +0.5

-PD

Total Power Dissipation

100

-TJ

Junction Temperature Operating Range

(Note 12)

-40 to +125

°C

-TStg

Storage Temperature Range

-65 to +150

°C

All Pins

ESD

Electrostatic Discharge Capability

Human Body Model

Charged Device Model

2000

500

Parameter

Condition

Symbol

Min

Typ

Max

Unit

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