S29GL032A datasheet(82/88 Pages) SPANSION

82 / 88 page

S29GLxxxA MirrorBit™ Flash Family

S29GLxxxA_00_A2 January 28, 2005

Ad van c e

Inf o rmation

Erase And Programming Performance

Notes:

1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 10,000 cycles; checkerboard

data pattern.

2. Under worst case conditions of 90

°C; Worst case VCC, 100,000 cycles.

3. Effective programming time (typ) is 15 µs (per word), 7.5 µs (per byte).

4. Effective accelerated programming time (typ) is 12.5 µs (per word), 6.3 µs (per byte).

5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer

operation.

6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

7. System-level overhead is the time required to execute the command sequence(s) for the program command. See

Tables 25 and 26 for further information on command definitions.

Parameter

Typ (Note 1)

Max

(Note 2)

Unit

Comments

Sector Erase Time

0.5

3.5

sec

Excludes 00h

programming

prior to erasure

(Note 6)

Chip Erase Time

S29GL032A

S29GL064A

128

Total Write Buffer Program Time (Notes 3, 5)

240

µs

Excludes system

level overhead

(Note 7)

Total Accelerated Effective Write Buffer Program Time

(Notes 4, 5)

200

µs

Chip Program Time

S29GL032A

31.5

sec

S29GL064A

S29GL032A Datasheet(PDF) 82 Page - SPANSION

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