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EN29F800 Datasheet(PDF) 28 Page - List of Unclassifed Manufacturers

Part # EN29F800
Description  8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only
PDF  38 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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EN29F800 Datasheet(HTML) 28 Page - List of Unclassifed Manufacturers

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4800 Great America Parkway, Suite 202
Tel: 408-235-8680
Santa Clara, CA 95054
Fax: 408-235-8685
28
EN29F800
Rev. E, Issue Date: 2001/07/05
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
1
8
sec
Chip Erase Time
19
35
sec
Excludes 00H programming prior
to erasure
Byte Programming Time
7
300
µs
Word Programming Time
7
300
µs
Byte
8.2
24.5
Chip Programming
Time
Word
4.1
12.2
sec
Excludes system level overhead
Erase/Program Endurance
100K
cycles
Minimum 100K cycles guaranteed
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins
(including A9, Reset and OE )
-1.0 V
12.0 V
Input voltage with respect to Vss on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 14. 32-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Table 15. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Minimum Pattern Data Retention Time
125°C
20
Years



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