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LTM4613 Datasheet(PDF) 16 Page - Linear Technology |
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LTM4613 Datasheet(HTML) 16 Page - Linear Technology |
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16 / 28 page ![]() LTM4648 16 4648f For more information www.linear.com/LTM4648 applicaTions inForMaTion Run Enable The RUN pin has an enable threshold of 1.40V maximum, typically 1.25V with 150mV of hysteresis. It controls the turn-on of the µModule. The RUN pin can be pulled up to VIN for 5V operation, or a 5V Zener diode can be placed on the pin and a 10k to 100k resistor can be placed up to higher than 5V input for enabling the µModule. The RUN pin can also be used for output voltage sequencing. In parallel operation the RUN pins can be tied together and controlled from a single control. See the Typical Applica- tion circuits in Figures 20 and 21. The RUN pin can also be left floating. The RUN pin has a 1µA pull-up current source that increases to 4.5µA during ramp-up. Differential Remote Sense Amplifier An accurate differential remote sense amplifier is provided in the LTM4648 to sense low output voltages accurately at the remote load points. This is especially true for high current loads. It is very important that the DIFFP and DIFFN are connected properly at the output, and DIFFOUT is connected to VOUT_LCL. Review the parallel schematics in Figures 20 and 21. SW Pins The SW pin is generally for testing purposes by monitor- ing the pin. The SW pin can also be used to dampen out switch node ringing caused by LC parasitic in the switched current path. Usually a series R-C combination is used called a snubber circuit. The resistor will dampen the resonance and the capacitor is chosen to only affect the high frequency ringing across the resistor. If the stray inductance or capacitance can be measured or approximated then a somewhat analytical technique can be used to select the snubber values. The inductance is usually easier to predict. It combines the power path board inductance in combination with the MOSFET interconnect bond wire inductance. First the SW pin can be monitored with a wide bandwidth scope with a high frequency scope probe. The ring fre- quency can be measured for its value. The impedance Z can be calculated: ZL = 2π • f • L where f is the resonant frequency of the ring, and L is the total parasitic inductance in the switch path. If a resistor is selected that is equal to Z, then the ringing should be dampened. The snubber capacitor value is chosen so that its impedance is equal to the resistor at the ring frequency. Calculated by: ZC = 1 2π • f •C These values are a good place to start with. Modification to these components should be made to attenuate the ringing with the least amount the power loss. Temperature Monitoring Measuring the absolute temperature of a diode is pos- sible due to the relationship between current, voltage and temperature described by the classic diode equation: ID = IS • e VD η • VT ⎛ ⎝⎜ ⎞ ⎠⎟ or VD = η• VT •ln ID IS where ID is the diode current, VD is the diode voltage, η is the ideality factor (typically close to 1.0) and IS (satura- tion current) is a process dependent parameter. VT can be broken out to: VT = k • T q where T is the diode junction temperature in Kelvin, q is the electron charge and k is Boltzmann’s constant. VT is approximately 26mV at room temperature (298K) and scales linearly with Kelvin temperature. It is this linear temperature relationship that makes diodes suitable temperature sensors. The IS term in the equation above is the extrapolated current through a diode junction when the diode has zero volts across the terminals. The IS term varies from process to process, varies with temperature, and by definition must always be less than ID. Combining all of the constants into one term: KD = η • k q |
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