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GMS82512 Datasheet(PDF) 13 Page - Hynix Semiconductor |
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GMS82512 Datasheet(HTML) 13 Page - Hynix Semiconductor |
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13 / 93 page ![]() GMS82512/16/24 HYUNDAI MicroElectronics 10 FEB. 2000 Ver 1.00 7. ELECTRICAL CHARACTERISTICS 7.1 Absolute Maximum Ratings Supply voltage ............................................. -0.3 to +7.0 V Storage Temperature .................................. -40 to +125 °C Voltage on any pin with respect to Ground (VSS) ..................................................................-0.3 to VDD+0.3 Maximum current out of VSS pin .......................... 150 mA Maximum current into VDD pin .............................. 80 mA Maximum current sunk by (IOL per I/O Pin) .......... 20 mA Maximum output current sourced by (IOH per I/O Pin) ................................................................................... 8 mA Maximum current ( ΣI OL) ...................................... 100 mA Maximum current ( ΣI OH)........................................ 50 mA Note: Stresses above those listed under “Absolute Maxi- mum Ratings” may cause permanent damage to the de- vice. This is a stress rating only and functional operation of the device at any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for ex- tended periods may affect device reliability. 7.2 Recommended Operating Conditions 7.3 A/D Converter Characteristics (TA=25°C, VSS=0V, VDD=5.12V@fXIN=8MHz, VDD=3.072V@fXIN=4MHz) Parameter Symbol Condition Specifications Unit Min. Max. Supply Voltage VDD fXIN=1 ~ 10 MHz fXIN=1 ~ 8 MHz fXIN=1 ~ 4 MHz 4.5 2.7 2.2 5.5 5.5 5.5 V Operating Frequency fXIN VDD=4.5~5.5V VDD=2.7~5.5V VDD=2.2~5.5V 1 1 1 10 8 4 MHz Operating Temperature TOPR Normal Version Temperature Extention Version -20 -40 85 85 °C Parameter Symbol Specifications Unit Min. Typ.1 Max. fXIN=4MHz fXIN=8MHz Analog Input Voltage Range VAIN VSS - AVDD AVDD V Non-linearity Error NNLE - ±1.0 ±1.5 ±1.5 LSB Differential Non-linearity Error NDNLE - ±1.0 ±1.5 ±1.5 LSB Zero Offset Error NZOE - ±0.5 ±1.5 ±1.5 LSB Full Scale Error NFSE - ±0.35 ±0.5 ±0.5 LSB Gain Error NGE - ±1.0 ±1.5 ±1.5 LSB Overall Accuracy NACC - ±1.0 ±1.5 ±1.5 LSB AVDD Input Current IREF -0.5 1.0 1.0 mA Conversion Time TCONV -- 40 20 µs |
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