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MMRF1022HS Datasheet(PDF) 6 Page - NXP Semiconductors

Part # MMRF1022HS
Description  RF Power LDMOS Transistor
PDF  16 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF1022HS Datasheet(HTML) 6 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
MMRF1022HS
TYPICAL CHARACTERISTICS — 2110–2170 MHz
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
8
20
0
60
50
40
30
20
18
16
10
100
400
10
–60
14
12
10
0
–30
–40
–50
Figure 7. Broadband Frequency Response
6
18
f, FREQUENCY (MHz)
VDD =28 Vdc
Pin =0 dBm
IDQA = 500 mA
VGSB =0.5 Vdc
14
12
10
16
8
1800
1880
1960
2040
2120
2200
2280
2360
2440
Gain
ACPR
ηD
2110 MHz
Gps
2170 MHz
2170 MHz
2110 MHz
2140 MHz
2170 MHz
2170 MHz
2140 MHz
2140 MHz
2110 MHz
VDD =28 Vdc,IDQA = 500 mA, VGSB =0.5 Vdc
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF



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