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MMRF1022HS Datasheet(PDF) 7 Page - NXP Semiconductors |
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MMRF1022HS Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 16 page ![]() MMRF1022HS 7 RF Device Data Freescale Semiconductor, Inc. Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning VDD =28 Vdc, IDQA = 774 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle f (MHz) Zsource (Ω) Zin (Ω) Max Output Power P1dB Zload (1) (Ω) Gain (dB) (dBm) (W) ηD (%) AM/PM (°) 2110 3.58 – j6.92 3.34 + j6.51 2.02 – j4.19 19.3 51.9 155 58.6 –14 2140 4.43 – j7.58 4.13 + j7.07 2.06 – j4.27 19.3 51.9 154 58.2 –15 2170 5.91 – j8.34 5.51 + j7.60 2.07 – j4.36 19.3 51.8 153 57.2 –15 f (MHz) Zsource (Ω) Zin (Ω) Max Output Power P3dB Zload (2) (Ω) Gain (dB) (dBm) (W) ηD (%) AM/PM (°) 2110 3.58 – j6.92 3.35 + j6.99 1.95 – j4.52 16.9 52.7 184 58.7 –19 2140 4.43 – j7.58 4.25 + j7.68 2.04 – j4.59 17.0 52.6 183 58.3 –20 2170 5.91 – j8.34 5.85 + j8.37 2.03 – j4.68 17.0 52.6 181 57.4 –19 (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning VDD =28 Vdc, IDQA = 774 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle f (MHz) Zsource (Ω) Zin (Ω) Max Drain Efficiency P1dB Zload (1) (Ω) Gain (dB) (dBm) (W) ηD (%) AM/PM (°) 2110 3.58 – j6.92 3.40 + j6.96 3.99 – j2.11 22.1 49.7 93 69.3 –22 2140 4.43 – j7.58 4.27 + j7.51 3.90 – j2.21 22.0 49.7 93 68.0 –21 2170 5.91 – j8.34 5.82 + j7.92 4.04 – j2.22 22.0 49.5 88 66.1 –20 f (MHz) Zsource (Ω) Zin (Ω) Max Drain Efficiency P3dB Zload (2) (Ω) Gain (dB) (dBm) (W) ηD (%) AM/PM (°) 2110 3.58 – j6.92 3.29 + j7.28 3.58 – j2.55 19.7 50.9 122 69.6 –29 2140 4.43 – j7.58 4.19 + j8.05 3.34 – j2.43 19.7 50.7 119 67.6 –29 2170 5.91 – j8.34 5.96 + j8.77 3.33 – j2.55 19.7 50.8 119 66.4 –28 (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload Output Load Pull Tuner and Test Circuit |
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