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MMRF1022HS Datasheet(PDF) 7 Page - NXP Semiconductors

Part # MMRF1022HS
Description  RF Power LDMOS Transistor
PDF  16 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF1022HS Datasheet(HTML) 7 Page - NXP Semiconductors

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MMRF1022HS
7
RF Device Data
Freescale Semiconductor, Inc.
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD =28 Vdc, IDQA = 774 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
(Ω)
Zin
(Ω)
Max Output Power
P1dB
Zload (1)
(Ω)
Gain (dB)
(dBm)
(W)
ηD
(%)
AM/PM
(°)
2110
3.58 – j6.92
3.34 + j6.51
2.02 – j4.19
19.3
51.9
155
58.6
–14
2140
4.43 – j7.58
4.13 + j7.07
2.06 – j4.27
19.3
51.9
154
58.2
–15
2170
5.91 – j8.34
5.51 + j7.60
2.07 – j4.36
19.3
51.8
153
57.2
–15
f
(MHz)
Zsource
(Ω)
Zin
(Ω)
Max Output Power
P3dB
Zload (2)
(Ω)
Gain (dB)
(dBm)
(W)
ηD
(%)
AM/PM
(°)
2110
3.58 – j6.92
3.35 + j6.99
1.95 – j4.52
16.9
52.7
184
58.7
–19
2140
4.43 – j7.58
4.25 + j7.68
2.04 – j4.59
17.0
52.6
183
58.3
–20
2170
5.91 – j8.34
5.85 + j8.37
2.03 – j4.68
17.0
52.6
181
57.4
–19
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28 Vdc, IDQA = 774 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
f
(MHz)
Zsource
(Ω)
Zin
(Ω)
Max Drain Efficiency
P1dB
Zload (1)
(Ω)
Gain (dB)
(dBm)
(W)
ηD
(%)
AM/PM
(°)
2110
3.58 – j6.92
3.40 + j6.96
3.99 – j2.11
22.1
49.7
93
69.3
–22
2140
4.43 – j7.58
4.27 + j7.51
3.90 – j2.21
22.0
49.7
93
68.0
–21
2170
5.91 – j8.34
5.82 + j7.92
4.04 – j2.22
22.0
49.5
88
66.1
–20
f
(MHz)
Zsource
(Ω)
Zin
(Ω)
Max Drain Efficiency
P3dB
Zload (2)
(Ω)
Gain (dB)
(dBm)
(W)
ηD
(%)
AM/PM
(°)
2110
3.58 – j6.92
3.29 + j7.28
3.58 – j2.55
19.7
50.9
122
69.6
–29
2140
4.43 – j7.58
4.19 + j8.05
3.34 – j2.43
19.7
50.7
119
67.6
–29
2170
5.91 – j8.34
5.96 + j8.77
3.33 – j2.55
19.7
50.8
119
66.4
–28
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
Output Load Pull
Tuner and Test
Circuit



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