8

RF Device Data

Freescale Semiconductor, Inc.

MMRF1022HS

Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning

f

(MHz)

(Ω)

(Ω)

Max Output Power

P1dB

(Ω)

Gain (dB)

(dBm)

(W)

(%)

AM/PM

(°)

2110

2.40 – j5.79

2.25 + j5.71

1.80 – j4.30

14.8

54.8

300

53.8

–26

2140

2.86 – j6.24

2.71 + j6.24

1.91 – j4.27

15.2

54.8

300

54.5

–27

2170

3.85 – j6.73

3.68 + j6.78

1.96 – j4.34

15.4

54.8

302

54.3

–28

f

(MHz)

(Ω)

(Ω)

Max Output Power

P3dB

(Ω)

Gain (dB)

(dBm)

(W)

(%)

AM/PM

(°)

2110

2.40 – j5.79

2.33 + j6.08

1.77 – j4.50

12.6

55.5

353

55.2

–33

2140

2.86 – j6.24

2.94 + j6.66

1.89 – j4.66

12.9

55.4

350

54.6

–34

2170

3.85 – j6.73

4.09 + j7.25

1.95 – j4.72

13.1

55.5

351

54.6

–35

(1) Load impedance for optimum P1dB power.

(2) Load impedance for optimum P3dB power.

= Impedance as measured from gate contact to ground.

Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning

f

(MHz)

(Ω)

(Ω)

Max Drain Efficiency

P1dB

(Ω)

Gain (dB)

(dBm)

(W)

(%)

AM/PM

(°)

2110

2.40 – j5.79

1.97 + j5.83

4.14 – j3.31

16.4

53.3

215

64.5

–33

2140

2.86 – j6.24

2.41 + j6.35

3.90 – j2.93

16.7

53.4

218

64.4

–34

2170

3.85 – j6.73

3.27 + j6.92

3.73 – j2.68

16.9

53.3

214

64.1

–35

f

(MHz)

(Ω)

(Ω)

Max Drain Efficiency

P3dB

(Ω)

Gain (dB)

(dBm)

(W)

(%)

AM/PM

(°)

2110

2.40 – j5.79

2.14 + j6.14

4.07 – j3.91

14.1

54.1

258

64.2

–40

2140

2.86 – j6.24

2.65 + j6.74

3.90 – j3.32

14.6

54.1

257

64.4

–43

2170

3.85 – j6.73

3.74 + j7.38

3.57 – j3.27

14.7

54.3

267

64.0

–43

(1) Load impedance for optimum P1dB efficiency.

(2) Load impedance for optimum P3dB efficiency.

= Impedance as measured from gate contact to ground.

Input Load Pull

Tuner and Test

Circuit

Device

Under

Test

Output Load Pull

Tuner and Test

Circuit