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OPA855 Datasheet(PDF) 21 Page - Texas Instruments |
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OPA855 Datasheet(HTML) 21 Page - Texas Instruments |
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21 / 27 page ![]() F IN Z Noise Gain 1 Z § · ¨ ¸ © ¹ Place gain and feedback resistors close to pins to minimize stray capacitance Ground and power plane removed from inner layers. Ground fill on outer layers also removed Ground and power plane exist on inner layers. Place bypass capacitor close to power pins Connect the thermal pad to the negative supply pin CBYP RF RG + ± VS- CBYP VS+ Representative schematic 1 8 2 7 3 6 4 5 RS CBYP RF RG RS CBYP Thermal Pad Connect PD to VS+ to enable the amplifier NC (Pin 2) isolates the IN- and FB pins thereby reducing capacitive coupling 21 OPA855 www.ti.com SBOS622 – JULY 2018 Product Folder Links: OPA855 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated 12.2 Layout Example Figure 19. Layout Recommendation When configuring the OPA855 as a transimpedance amplifier additional care must be taken to minimize the inductance between the avalanche photodiode (APD) and the amplifier. APD packaging can be quite large which often requires the APD to be placed further away from the amplifier than ideal. The added distance between the two device results in increased inductance between the APD and op amp feedback network as shown in Figure 20. The added inductance is detrimental to a decompensated amplifiers stability since it isolates the APD capacitance from the transimpedance amplifier's noise-gain equation. The noise-gain is given by Equation 3. The added PCB trace inductance between the feedback network increases the denominator in Equation 3 thereby reducing the noise-gain and the phase margin. In cases where a leaded APD in a TO can is used inductance should be further minimized by cutting the leads of the TO can to be as short as possible. The layout shown in Figure 20 can be improved by following some of the guidelines shown in Figure 21. The two key rules to follow are: • Add and isolation resistor RISO as close as possible to the amplifiers inverting input. Choose RISO to be between 10 Ω -20 Ω. The resistor dampens the potential resonance caused by the trace inductance and the amplifiers internal capacitance. • Close the loop between the feedback elements (RF and CF) and RISO as close as possible to the APD pins. This ensures a more balanced layout and reduces the inductive isolation between the APD and the feedback network. where |
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