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OPA855 Datasheet(PDF) 21 Page - Texas Instruments

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Part # OPA855
Description  8 GHz Gain Bandwidth Product, Gain of 7 V/V Stable, Bipolar Input Amplifier
PDF  27 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

OPA855 Datasheet(HTML) 21 Page - Texas Instruments

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F
IN
Z
Noise Gain
1
Z
§
·
¨
¸
©
¹
Place gain and feedback resistors
close to pins to minimize stray
capacitance
Ground and power plane removed
from inner layers. Ground fill on
outer layers also removed
Ground and power plane exist on
inner layers.
Place bypass capacitor
close to power pins
Connect the thermal pad to the
negative supply pin
CBYP
RF
RG
+
±
VS-
CBYP
VS+
Representative schematic
1
8
2
7
3
6
4
5
RS
CBYP
RF
RG
RS
CBYP
Thermal
Pad
Connect PD to VS+ to enable the
amplifier
NC (Pin 2) isolates the IN- and FB
pins thereby reducing capacitive
coupling
21
OPA855
www.ti.com
SBOS622 – JULY 2018
Product Folder Links: OPA855
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Copyright © 2018, Texas Instruments Incorporated
12.2 Layout Example
Figure 19. Layout Recommendation
When configuring the OPA855 as a transimpedance amplifier additional care must be taken to minimize the
inductance between the avalanche photodiode (APD) and the amplifier. APD packaging can be quite large which
often requires the APD to be placed further away from the amplifier than ideal. The added distance between the
two device results in increased inductance between the APD and op amp feedback network as shown in
Figure 20. The added inductance is detrimental to a decompensated amplifiers stability since it isolates the APD
capacitance from the transimpedance amplifier's noise-gain equation. The noise-gain is given by Equation 3. The
added PCB trace inductance between the feedback network increases the denominator in Equation 3 thereby
reducing the noise-gain and the phase margin. In cases where a leaded APD in a TO can is used inductance
should be further minimized by cutting the leads of the TO can to be as short as possible.
The layout shown in Figure 20 can be improved by following some of the guidelines shown in Figure 21. The two
key rules to follow are:
•
Add and isolation resistor RISO as close as possible to the amplifiers inverting input. Choose RISO to be
between 10 Ω -20 Ω. The resistor dampens the potential resonance caused by the trace inductance and the
amplifiers internal capacitance.
•
Close the loop between the feedback elements (RF and CF) and RISO as close as possible to the APD pins.
This ensures a more balanced layout and reduces the inductive isolation between the APD and the feedback
network.
where



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