MMRF2007N MMRF2007GN

1

RF Device Data

Freescale Semiconductor, Inc.

RF LDMOS Wideband Integrated

Power Amplifiers

The MMRF2007N wideband integrated circuit is designed with on--chip

pre--matching that makes it usable from 136 to 940 MHz. This multi--stage

structure is rated for 26 to 32 V operation, has a 2--stage design with off--chip

matching for the input and covers all typical modulation formats. This device is

ideal for use in military and commercial VHF and UHF radio base station or

radar driver applications.

Frequency

(dB)

PAE

(%)

IMD

(dBc)

850 MHz

30.6

40.1

–30.5

900 MHz

31.9

42.4

–31.0

940 MHz

32.6

42.1

–31.3

 Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 W CW Output

Enhanced Ruggedness

Features

 Characterized with series equivalent large--signal impedance parameters and

common source S--parameters

 On--chip prematching. On--chip stabilization.

 Integrated quiescent current temperature compensation with

 Integrated ESD protection

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistors.

GND

2

3

4

5

8

9

16

10

11

12

GND

15

7

13

(Top View)

6

1

14

Quiescent Current

Quiescent Current

GND

GND

Document Number: MMRF2007N

Rev. 0, 6/2015

Freescale Semiconductor

Technical Data

136–940 MHz, 35 W AVG., 28 V

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

MMRF2007N

MMRF2007GN

TO--270WBL--16

PLASTIC

MMRF2007N

TO--270WBLG--16

PLASTIC

MMRF2007GN

 Freescale Semiconductor, Inc., 2015. All rights reserved.