AFV10700GS datasheet(3/19 Pages) NXP

3 / 19 page

AFV10700H AFV10700HS AFV10700GS

RF Device Data

NXP Semiconductors

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ(A+B) = 100 mA, Pout = 730 W Peak

(73 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle

Power Gain

Gps

18.0

19.2

21.0

Drain Efficiency

D

54.5

58.5

—

Input Return Loss

IRL

—

–15

–9

Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test Voltage, VDD

Result

1030

Pulse

(128 sec,

10% Duty Cycle)

> 20:1 at All Phase Angles

17.2 Peak

(3 dB Overdrive)

No Device Degradation

Table 5. Ordering Information

Device

Tape and Reel Information

Package

AFV10700HR5

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel

NI--780H--4L

AFV10700HSR5

R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel

NI--780S--4L

AFV10700GSR5

NI--780GS--4L

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