AFV10700H AFV10700HS AFV10700GS

1

RF Device Data

NXP Semiconductors

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

These RF power transistors are designed for pulse applications operating at

1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at

reduced power. These devices are suitable for use in defense and commercial

pulse applications with large duty cycles and long pulses, such as IFF,

secondary surveillance radars, ADS--B transponders, DME and other complex

pulse chains.

Frequency

Signal Type

(V)

(W)

(dB)

(%)

1030

Pulse

(128 sec,

10% Duty Cycle)

50

800 Peak

17.5

52.1

1090

700 Peak

19.0

56.1

1030

52

850 Peak

17.5

51.7

1090

770 Peak

19.2

56.1

Frequency

(MHz)

Signal Type

(V)

(W)

(dB)

(%)

Pulse

(128 sec,

10% Duty Cycle)

50

730 Peak

19.2

58.5

Narrowband Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

Pulse

(128 sec,

10% Duty Cycle)

> 20:1 at

All Phase

Angles

17.2 Peak

(3 dB

Overdrive)

50

No Device

Degradation

1. Measured in 1030–1090 MHz reference circuit (page 5).

2. Measured in 1030 MHz narrowband production test fixture (page 9).

Features

 Internally input and output matched for broadband operation and ease of use

 Device can be used in a single--ended, push--pull or quadrature configuration

 High ruggedness, handles > 20:1 VSWR

 Integrated ESD protection with greater negative gate--source voltage range

for improved Class C operation and gate voltage pulsing

 Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)

 Included in NXP product longevity program with assured supply for a

minimum of 15 years after launch

Document Number: AFV10700H

Rev. 1, 01/2018

NXP Semiconductors

Technical Data

1030–1090 MHz, 700 W PEAK, 52 V

AIRFAST RF POWER LDMOS

TRANSISTORS

AFV10700H

AFV10700HS

AFV10700GS

NI--780S--4L

AFV10700HS

NI--780H--4L

AFV10700H

Figure 1. Pin Connections

(Top View)

Drain A

31

42 Drain B

Gate A

Gate B

Note: The backside of the package is the

source terminal for the transistor.

NI--780GS--4L

AFV10700GS

 2017–2018 NXP B.V.