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OPA2156 Datasheet(PDF) 4 Page - Texas Instruments |
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OPA2156 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 19 page ![]() 4 OPA2156 SBOS900 – SEPTEMBER 2018 www.ti.com Product Folder Links: OPA2156 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Recommended Operating Conditions . Exposure to absolute-maximum-rated conditions for extendedperiods may affect device reliability. (2) Short-circuit to ground, one amplifier per package. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage, VS = (V+) – (V–) ±20 (+40, single supply) V Signal input pins Voltage Common-mode (V–) – 0.5 (V+) + 0.5 V Differential 0.5 Current ±10 mA Output short circuit(2) Continuous Temperature Operating junction –40 150 °C Storage, Tstg –65 150 (1) JEDEC document JEP155 states that 500-V HBM allows safemanufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safemanufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge OPA2156 Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V OPA2156 Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±500 V 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply voltage, VS = (V+) – (V–) 4.5 (±2.25) 36 (±18) V Specified junction temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information: OPA2156 THERMAL METRIC(1) OPA2156 UNIT 8 PINS D (SOIC) RθJA Junction-to-ambient thermal resistance 120 °C/W RθJC(top) Junction-to-case(top) thermal resistance 51.8 °C/W RθJB Junction-to-board thermal resistance 65.4 °C/W ψJT Junction-to-top characterization parameter 10.0 °C/W ψJB Junction-to-board characterization parameter 64.2 °C/W |
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