TMUX1511PWR datasheet(9/22 Pages) TI1

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VOUT

Output

0 V

VDD

QC = CL ×

VOUT

VSEL

GND

OUTPUT

SEL1 - SEL4

VDD

0.1 F

VOUT

OUTPUT

VOUT

VSEL

GND

VDD

0 V

Supply

Ramp

(VDD)

1.5 V

tON (VDD)

tOFF (VDD)

90%

OUTPUT

0 V

VDD

0.1 F

OUTPUT

VDD

SEL1 - SEL4

VDD

OUTPUT

TMUX1511

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SCDS390 – SEPTEMBER 2018

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7.5 TON (VDD) and TOFF (VDD) Time

TON (VDD) time is defined as the time taken by the output of the device to rise to 90% after the supply has risen

past the supply threshold. The 90% measurement is utilized to provide the timing of the device turning on in the

system. The time constant from the load resistance and load capacitance can be added to the turn-on-VDD time

to calculate system level timing. Figure 5 shows the setup used to measure transition time, denoted by the

symbol tON (VDD).

TOFF (VDD) time is defined as the time taken by the output of the device to fall to 90% after the enable has fallen

past the supply threshold. The 90% measurement is utilized to provide the timing of the device turning off in the

system. The time constant from the load resistance and load capacitance can be added to the turn-off-VDD time

to calculate system level timing. Figure 5 shows the setup used to measure transition time, denoted by the

symbol tOFF (VDD).

Figure 5. Turn-On-VDD and Turn-Off-VDD Time Measurement Setup

7.6 Charge Injection

The amount of charge injected into the source or drain of the device during the falling or rising edge of the gate

signal is known as charge injection, and is denoted by the symbol QC. Figure 6 shows the setup used to

measure charge injection from source (Sx) to drain (Dx).

Figure 6. Charge-Injection Measurement Setup

TMUX1511PWR Datasheet(PDF) 9 Page - Texas Instruments

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