MHT1108N datasheet(2/15 Pages) NXP

2 / 15 page

RF Device Data

NXP Semiconductors

MHT1108N

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +65

Vdc

Gate--Source Voltage

VGS

–6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

–65 to +150

°C

Case Operating Temperature Range

–40 to +150

°C

Operating Junction Temperature Range (1,2)

–40 to +150

°C

Total Device Dissipation @ TC =25°C

Derate above 25°C

32.9

0.26

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 97°C, 12.6 W CW, 28 Vdc, IDQ = 110 mA, 2450 MHz

RθJC

3.8

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1C, passes 1000 V

Charge Device Model (per JESD22--C101)

C3, passes 1000 V

Table 4. Moisture Sensitivity Level (MSL)

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

°C

Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS =32 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID = 14.3 μAdc)

VGS(th)

0.8

1.2

1.6

Vdc

Gate Quiescent Voltage

(VDS =28 Vdc, ID =90 mAdc)

VGS(Q)

—

1.8

—

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID = 143 mAdc)

VDS(on)

0.1

0.2

0.3

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.nxp.com/RF/calculators.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

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