MHT1108N

1

RF Device Data

NXP Semiconductors

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 12.5 W CW high efficiency RF power transistor is designed for consumer

and commercial cooking applications operating in the 2450 MHz ISM band.

Frequency

(MHz)

Signal Type

(dB)

PAE

(%)

(W)

2400

CW

18.5

55.7

12.5

2450

18.6

56.3

12.5

2500

18.1

54.2

12.5

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(dBm)

Test

Voltage

Result

2450

CW

> 10:1

at all Phase

Angles

26

(3 dB

Overdrive)

32

No Device

Degradation

Features

• Characterized with series equivalent large--signal impedance parameters

and common source S--parameters

• Qualified for operation at 32 Vdc

• Integrated ESD protection

• 150°C case operating temperature

• 150°C die temperature capability

Target Applications

• Consumer cooking as PA driver

• Commercial cooking as PA driver

Document Number: MHT1108N

Rev. 0, 03/2017

NXP Semiconductors

Technical Data

2450 MHz, 12.5 W CW, 28 V

RF POWER LDMOS TRANSISTOR

FORCONSUMERAND

COMMERCIAL COOKING

MHT1108N

DFN 4 × 6

PLASTIC

15

9

11

10

1

16

14

13

12

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

N.C.

Note: Exposed backside of the package is

the source terminal for the transistor.

(Top View)

2

3

4

5

6

7

8

Gate

Gate

Gate

Gate

Drain

Drain

Drain

Drain

Figure 1. Pin Connections

© 2017 NXP B.V.