4

INA592

SBOS914 – OCTOBER 2018

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Copyright © 2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings

only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Recommended

Operating Conditions . Exposure to absolute-maximum-rated conditions for extended periods mayaffect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage, V+ to V–

36

V

Input voltage

±54

V

Output short circuit (to ground)

Continuous

Operating temperature

–55

125

°C

Junction temperature

–55

125

°C

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safemanufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safemanufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic

discharge

±1500

V

±750

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage, VS = (V+) – (V–)

4.5 (±2.25)

36 (±18)

V

Specified temperature

–40

125

°C

(1)

For more information about traditional and new thermalmetrics, see the Semiconductor and ICPackage Thermal Metrics application

report.

6.4 Thermal Information

INA592

UNIT

DGK (VSSOP)

8 PINS

Junction-to-ambient thermal resistance

158

°C/W

Junction-to-case (top) thermal resistance

48.6

°C/W

Junction-to-board thermal resistance

78.7

°C/W

Junction-to-top characterization parameter

3.9

°C/W

Junction-to-board characterization parameter

77.3

°C/W

Junction-to-case (bottom) thermal resistance

N/A

°C/W