2N7002F datasheet(5/11 Pages) PHILIPS

5 / 11 page

Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

Product data

Rev. 01 — 11 February 2002

5 of 11

9397 750 09096

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID =10 µA; VGS =0V

Tj =25 °C

6075-

Tj = −55 °C

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; Figure 9

Tj =25 °C

12-

Tj = 150 °C

0.6

Tj = −55 °C

3.5

IDSS

drain-source leakage current

VDS =48V; VGS =0V

Tj =25 °C

0.01

1.0

µA

Tj = 150 °C

--10

µA

IGSS

gate-source leakage current

VGS = ±15 V; VDS = 0 V

100

RDSon

drain-source on-state resistance

VGS = 10 V; ID = 500 mA; Figure 7 and 8

Tj =25 °C

1.7

Ω

Tj = 150 °C

3.7

Ω

VGS = 4.5 V; ID =75mA; Figure 7 and 8

Tj =25 °C

2.25

Ω

Dynamic characteristics

gfs

forward transconductance

VDS =10V; ID = 200 mA

100

300

Ciss

input capacitance

VGS =0V; VDS = 10 V; f = 1 MHz; Figure 11

2540pF

Coss

output capacitance

Crss

reverse transfer capacitance

7.5

ton

turn-on time

VDD =50V; RD = 250 Ω; VGS =10V;

RG =50 Ω; RGS =50 Ω

toff

turn-off time

1215ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 300 mA; VGS =0V; Figure 12

0.85

1.5

trr

reverse recovery time

IS = 300 mA; dIS/dt = −100 A/µs; VGS =0V;

VDS =25V

-30

recovered charge

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