Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

Product data

Rev. 01 — 11 February 2002

7 of 11

9397 750 09096

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

!==!"

0

0.6

1.2

1.8

2.4

-60

0

60

120

180

(V)

typ

min

!==!%

10-6

10-5

10-4

10-3

10-2

10-1

0

0.6

1.2

1.8

2.4

(A)

typ

min

03ai18

1

10

102

10-1

1

10

102

VDS (V)

C

(pF)

Ciss

Coss

Crss

03ai17

0

0.2

0.4

0.6

0.8

0

0.4

0.8

1.2

(A)

150