Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

Product data

Rev. 01 — 11 February 2002

2 of 11

9397 750 09096

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

-

60

V

drain current (DC)

-

475

mA

total power dissipation

-

0.83

W

junction temperature

-

150

°C

drain-source on-state resistance

1.7

2

Ω

2.25

4

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

-

60

V

drain-gate voltage (DC)

-60

V

gate-source voltage (DC)

-

±30

V

peak gate-source voltage

-

±40

V

drain current (DC)

-

475

mA

-

300

mA

peak drain current

-

1.9

A

total power dissipation

-

0.83

W

storage temperature

−65

+150

°C

operating junction temperature

−65

+150

°C

Source-drain diode

source (diode forward) current (DC)

-

475

mA

-

1.9

A