Philips Semiconductors

2N7002F

TrenchMOS™ Logic Level FET

Product data

Rev. 01 — 11 February 2002

6 of 11

9397 750 09096

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ai13

0

0.2

0.4

0.6

0.8

1

0

0.8

1.6

2.4

VDS (V)

ID

(A)

3 V

Tj = 25

VGS = 2.5 V

3.5 V

4 V

10 V

4.5 V

5 V

6 V

7 V

03ai16

0

0.2

0.4

0.6

0.8

0246

(A)

150

03ai15

0

1

2

3

4

0

0.2

0.4

0.6

0.8

1

ID (A)

RDSon

(

Ω)

VGS = 3.5 V

Tj = 25

4.5 V

4 V

7 V

6 V

5 V

10 V

!== &

0

0.6

1.2

1.8

2.4

-60

0

60

120

180

Tj (

a

a

R

DSon

R

DSon 25 C

°

()

-----------------------------

=