C770L datasheet(5/14 Pages) IRI

5 / 14 page

INTERNATIONAL

www.rectifierindia.com

April 2011

INVERTER GRADE THYRISTOR

C770L

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/us at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must

not exceed 1000A/us any time during turn-on. Note that these values of rate of rise of current apply to

the total device current including that from any local snubber network.

8.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least

30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.

The magnitude of IGM should be between five and ten times IGT1 which is shown on page 2. Its duration

(tp1) should be 20us or sufficient to allow the anode current to reach the times IL, whichever is greater.

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The

magnitude in the order of 1.5 times IGT.

The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum

ratings shown on page 1.

10.0

Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/us.

11.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the frist.

C770L Datasheet(PDF) 5 Page - Insel Rectifier India Pvt. Ltd.