2SJ621 datasheet(2/8 Pages) NEC

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Data Sheet D15634EJ1V0DS

2SJ621

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = –12 V, VGS = 0 V

–10

µA

Gate Leakage Current

IGSS

VGS =

m8.0 V, VDS = 0 V

m10

µA

Gate Cut-off Voltage

VGS(off)

VDS = –10 V, ID = –1.0 mA

0.45

1.5

Forward Transfer Admittance

| yfs |VDS = –10 V, ID = –3.5 A

4.0

Drain to Source On-state Resistance

RDS(on)1

VGS = –4.5 V, ID = –2.0 A

Ω

RDS(on)2

VGS = –3.0 V, ID = –2.0 A

Ω

RDS(on)3

VGS = –2.5 V, ID = –2.0 A

Ω

RDS(on)4

VGS = –1.8 V, ID = –1.5 A

105

Ω

Input Capacitance

Ciss

VDS = –10 V

630

Output Capacitance

Coss

VGS = 0 V

170

Reverse Transfer Capacitance

Crss

f = 1.0 MHz

100

Turn-on Delay Time

td(on)

VDD = –6.0 V, ID = –2.0 A

Rise Time

VGS = –4.0 V

Turn-off Delay Time

td(off)

RG = 10

Ω

320

Fall Time

200

Total Gate Charge

VDD = –10 V

6.2

Gate to Source Charge

QGS

VGS = –4.0 V

1.0

Gate to Drain Charge

QGD

ID = –3.5 A

2.0

Body Diode Forward Voltage

VF(S-D)

IF = 3.5 A, VGS = 0 V

0.84

TEST CIRCUIT 2 GATE CHARGE

TEST CIRCUIT 1 SWITCHING TIME

PG.

VGS (−)

D.U.T.

VDD

τ = 1 s

Duty Cycle

≤ 1%

PG.

Ω

D.U.T.

VDD

IG =

−2 mA

VGS

Wave Form

VDS

Wave Form

VGS(−)

VDS(−)

10%

90%

VGS

VDS

ton

toff

td(on)

td(off)

10%

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