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INA191 Datasheet(PDF) 5 Page - Texas Instruments |
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INA191 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 22 page  5 INA191 www.ti.com SLYS020 – FEBRUARY 2019 Product Folder Links: INA191 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated (1) RTI = referred-to-input. 6.5 Electrical Characteristics at TA = 25°C, VSENSE = VIN+ – VIN–, VVS = 1.8 V to 5.0 V, VIN+ = 12 V, and VENABLE = VVS (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT INPUT CMRR Common-mode rejection ratio VSENSE = 0 mV, VIN+ = –0.1 V to 40 V, TA = –40°C to +125°C 120 150 dB VO Offset voltage, RTI(1) VVS = 1.8 V, VSENSE = 0 mV –3 ±15 µV dVOS/dT Offset drift, RTI VSENSE = 0 mV, TA = –40°C to +125°C 10 130 nV/°C PSRR Power-supply rejection ratio, RTI VSENSE = 0 mV, VVS = 1.7 V to 5.5 V –3 ±5 µV/V IIB Input bias current VSENSE = 0 mV 0.5 3 nA IIO Input offset current VSENSE = 0 mV ±0.07 nA OUTPUT G Gain A1 devices 25 V/V A2 devices 50 V/V A3 devices 100 V/V A4 devices 200 V/V A5 devices 500 EG Gain error VOUT = 0.1 V to VS – 0.1 V –0.04% ±0.3% Gain error vs temperature TA = –40°C to +125°C 2 7 ppm/°C Nonlinearity error VOUT = 0.1 V to VVS – 0.1 V ±0.01% Maximum capacitive load No sustained oscillation 1 nF VOLTAGE OUTPUT VSP Swing to VVS power-supply rail VVS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C (VVS) – 20 (VVS) – 40 mV VSN Swing to GND VVS = 1.8 V, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = -10 mV (VGND) + 0.05 (VGND) + 1 mV Zero current output voltage VVS = 1.8 V, A1, A2, A3 Devices, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = 0 mV (VGND) + 1 (VGND) + 3 mV VVS = 1.8 V, A4 Devices, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = 0 mV (VGND) + 2 (VGND) + 4 mV VVS = 1.8 V, A5 Devices, RL = 10 kΩ to GND, TA = –40°C to +125°C, VSENSE = 0 mV (VGND) + 3 (VGND) + 9 mV FREQUENCY RESPONSE BW Bandwidth A1 devices, CLOAD = 10 pF 45 kHz A2 devices, CLOAD = 10 pF 37 kHz A3 devices, CLOAD = 10 pF 35 kHz A4 devices, CLOAD = 10 pF 33 kHz A5 devices, CLOAD = 10 pF 27 kHz SR Slew rate VVS = 5.0 V, VOUT = 0.5 V to 4.5 V 0.3 V/µs tS Settling time From current step to within 1% of final value 30 µs NOISE, RTI(1) Voltage noise density 75 nV/ √Hz ENABLE IEN Leakage input current 0 V ≤ VENABLE ≤ VVS 1 100 nA VIH High-level input voltage 1.3 5.5 V VIL Low-level input voltage 0 0.4 V VHYS Hysteresis 100 mV IODIS Disabled output leakage VVS = 1.8 V, VOUT = 0 V to 1.8 V, VENABLE = 0 V 1 5 µA POWER SUPPLY IQ Quiescent current VSENSE = 0 mV, VVS = 1.8 V 50 65 µA VSENSE = 0 mV, VVS = 1.8 V, TA = –40°C to +125°C 90 µA IQDIS Quiescent current disabled VENABLE < 0.4, VSENSE = 0 mV 10 100 nA |
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