6

LP5009, LP5012

SLVSEH2 – MAY 2019

www.ti.com

Product Folder Links: LP5009 LP5012

Submit Documentation Feedback

Copyright © 2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating ambient temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage on EN, IREF, OUTx, SCL, SDA, VCC

–0.3

6

V

Voltage on ADDRx

–0.3

VCC+0.3

V

Voltage on VCAP

–0.3

2

V

Continuous power dissipation

Internally limited

–40

125

°C

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±4000

V

±1500

7.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)

MIN

MAX

UNIT

Input voltage on VCC

2.7

5.5

V

Voltage on OUTx

0

5.5

V

Voltage on ADDRx, EN, SDA, SCL

0

5.5

V

–40

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

LP5009 or LP5012

UNIT

RUK (QFN)

20 PINS

Junction-to-ambient thermal resistance

53.7

°C/W

Junction-to-case (top) thermal resistance

55.3

°C/W

Junction-to-board thermal resistance

27.4

°C/W

Junction-to-top characterization parameter

1.9

°C/W

Junction-to-board characterization parameter

27.4

°C/W

Junction-to-case (bottom) thermal resistance

12.9

°C/W