WeEn Semiconductors

BUJD203AX

NPN power transistor with integrated diode

BUJD203AX

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Product data sheet

9 October 2018

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6. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-emitter peak

voltage

-

850

V

collector-base voltage

-

850

V

-

425

V

collector current

DC; Fig. 1; Fig. 2; Fig. 3

-

4

A

peak collector current

Fig. 1; Fig. 2; Fig. 3

-

8

A

base current

DC

-

2

A

peak base current

-

4

A

total power dissipation

-

26

W

storage temperature

-65

150

°C

junction temperature

-

150

°C

0

1000

800

400

600

200

001aac000

4

6

2

8

10

(A)

0

Fig. 1. Reverse bias safe operating area

001aab999

DUT

probe point

Fig. 2. Test circuit for reverse bias safe operating area