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BUJD203AX Datasheet(PDF) 8 Page - WeEn Semiconductors |
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BUJD203AX Datasheet(HTML) 8 Page - WeEn Semiconductors |
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8 / 13 page ![]() WeEn Semiconductors BUJD203AX NPN power transistor with integrated diode BUJD203AX All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 9 October 2018 8 / 13 001aab996 VBEsat (V) IC (A) 10- 1 10 1 0.6 0.8 0.2 0.4 1.0 1.2 1.4 0 Fig. 10. Base-emitter saturation voltage as a function of collector current; typical values 001aab994 IC (A) 10- 2 10 1 10- 1 10 102 hFE 1 VCE = 5 V 1 V Tj = 25 °C Fig. 11. DC current gain as a function of collector current; typical values 001aab989 tp RB VIM 0 RL DUT VCC T Fig. 12. Test circuit for resistive load switching 001aab990 IC IB 10 % 10 % 90 % 90 % ton toff ts tf t t IBon - IBoff ICon tr ≤ 30 ns Fig. 13. Switching times waveforms for resistive load IC / IB = 4 IC / IB = 4 VIM= - 6 to + 8 V; VCC = 250 V; tp = 20 us; δ = tp/T = 0.01 RB and RL calculated from ICon and IBon requirements. |
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