WeEn Semiconductors

BUJD203AX

NPN power transistor with integrated diode

BUJD203AX

All information provided in this document is subject to legal disclaimers.

Product data sheet

9 October 2018

4 / 13

001aac001

10

1

(A)

1

10

(1)

100 µs

200 µs

duty cycle = 0.01

50 µs

500 µs

DC

(2)

1) Ptot maximum and Ptot peak maximum lines

2) Second breakdown limits

3) I = Region of permissable DC operation

II = Extension for repetitive pulse operation

Fig. 3. Forward bias safe operating area for Tmb ≤ 25 °C

03aa13

0

40

80

120

0

50

100

150

200

(%)

Fig. 4. Normalized total power dissipation as a function of heatsink temperature