EPC2019 datasheet(3/6 Pages) EPC

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eGaN® FET DATASHEET

EPC2019

| 3

All measurements were done with substrate shortened to source.

Figure 5b: Capacitance (Log Scale)

VDS – Drain-to-Source Voltage (V)

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

1000

100

0.1

100

150

200

VSD– Source-to-Drain Voltage (V)

Figure 7: Reverse Drain-Source Characteristics

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4 .0

4.5

5.0

25˚C

125˚C

Figure 9: Normalized Threshold Voltage vs. Temperature

1.4

1.3

1.2

1.0

1.1

0.9

0.8

0.7

0.6

100

125

150

TJ – Junction Temperature (°C)

ID = 1.5 mA

Figure 5a: Capacitance (Linear Scale)

VDS – Drain-to-Source Voltage (V)

COSS = CGD + CSD

CISS = CGD + CGS

CRSS = CGD

400

350

300

250

200

150

100

150

200

0.5

1.0

1.5

2.0

Figure 6: Gate Charge

QG – Gate Charge (nC)

ID = 7 A

VDS = 100 V

Figure 8: Normalized On-State Resistance vs. Temperature

ID = 7 A

VGS = 5 V

2.0

1.8

1.6

1.4

1.2

1.0

0.8

100

125

150

TJ – Junction Temperature (°C)

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