EPC2019 datasheet(1/6 Pages) EPC

Part #	EPC2019

Description	Enhancement Mode Power Transistor

PDF	6 Pages

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Manufacturer	EPC [Espros Photonics corp]

Direct Link	http://www.espros.ch

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eGaN® FET DATASHEET

| 1

EPC2019

EPC2019 – Enhancement Mode Power Transistor

VDS, 200V

RDS(on) , 50 mW

ID , 8.5 A

EPC2019 eGaN® FETs are supplied only in

passivated die form with solder bars

Applications

• High Speed DC-DC conversion

• Class-D Audio

• High Frequency Hard-Switching and

Soft-Switching Circuits

Benefits

• Ultra High Efficiency

• Ultra Low RDS(on)

• Ultra Low QG

• Ultra Small Footprint

EFFICIENT POWER CONVERSION

G

D

S

HAL

Maximum Ratings

PARAMETER

VALUE

UNIT

VDS Drain-to-Source Voltage (Continuous)

200

V

ID

Continuous (TA = 25˚C, RθJA = 18°C/W)

8.5

A

Pulsed (25°C, TPULSE = 300 µs)

42

VGS

Gate-to-Source Voltage

6

V

Gate-to-Source Voltage

-4

TJ

Operating Temperature

-40 to 150

°C

TSTG Storage Temperature

-40 to 150

Thermal Characteristics

PARAMETER

TYP

UNIT

RθJC

Thermal Resistance, Junction-to-Case

2.7

°C/W

RθJB

Thermal Resistance, Junction-to-Board

7.5

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1)

72

Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

Static Characteristics (TJ = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 125 μA

200

V

IDSS

Drain-Source Leakage

VGS = 160 V, VDS = 0 V

20

100

µA

IGSS

Gate-to-Source Forward Leakage

VGS = 5 V

0.8

2.5

mA

Gate-to-Source Reverse Leakage

VGS = -4 V

20

100

µA

VGS(TH)

Gate Threshold Voltage

VDS = VGS, ID = 1.5 mA

0.8

1.4

2.5

V

RDS(on)

Drain-Source On Resistance

VGS = 5 V, ID = 7 A

36

50

mΩ

VSD

Source-Drain Forward Voltage

IS = 0.5 A, VGS = 0 V

1.8

V

All measurements were done with substrate connected to source.

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very

low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG

and zero QRR. The end result is a device that can handle tasks where very high switching frequency,

and low on-time are beneficial as well as those where on-state losses dominate.

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