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P841 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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P841 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 8 page ![]() TLP841 2007-10-01 2 Operating Ranges Characteristics Symbol Min Typ. Max Unit Supply voltage VCC ⎯ 5 24 V Forward current IF ⎯ ⎯ 20 mA Operating temperature range Topr −10 ⎯ 75 °C Optical and Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test conditions Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.00 1.23 1.40 V Reverse current IR VR = 5 V ⎯ ⎯ 10 μA Peak emission wavelength λP IF = 10 mA ⎯ 940 ⎯ nm Dark current ID (ICEO) VCE = 24 V, IF = 0 ⎯ ⎯ 0.05 μA Peak sensitivity wavelength λP ⎯ ⎯ 820 ⎯ nm Current transfer ratio IC/IF VCE = 2 V, IF = 10 mA 2.5 ⎯ 50 % Collector-emitter saturation voltage VCE (sat) IF = 20 mA, IC = 0.25 mA ⎯ 0.1 0.4 V Rise time tr ⎯ 15 50 Fall time tf VCE = 5 V, IC = 1 mA, RL = 1 kΩ (Note 3) ⎯ 15 50 μs Note 3 : Switching time measurement circuit and waveform Precautions • When removing flux with chemicals after soldering, clean only the leads on the soldering side; do not dip the whole package for cleaning. Chemicals remaining on an LED or photo transistor light emitter or receiver, if any, would have a bad influence to the optical characteristics and it may severely lower the conversion efficiency. • Care must be taken in relation to the environment in which the device is to be installed. Oil or chemicals may cause the package to melt or crack. • The device should be mounted on an unwarped surface. • Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1. IC/IF (t) IC/IF (0) = Po (t) Po (0) VCC VOUT RL IF VOUT IF tr 90% 10% tf td ts |
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