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P841 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # P841
Description  Infrared LED Phototransistor
PDF  8 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

P841 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TLP841
2007-10-01
2
Operating Ranges
Characteristics
Symbol
Min
Typ.
Max
Unit
Supply voltage
VCC
⎯
5
24
V
Forward current
IF
⎯
⎯
20
mA
Operating temperature range
Topr
−10
⎯
75
°C
Optical and Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test conditions
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10 mA
1.00
1.23
1.40
V
Reverse current
IR
VR = 5 V
⎯
⎯
10
μA
Peak emission wavelength
λP
IF = 10 mA
⎯
940
⎯
nm
Dark current
ID (ICEO)
VCE = 24 V, IF = 0
⎯
⎯
0.05
μA
Peak sensitivity wavelength
λP
⎯
⎯
820
⎯
nm
Current transfer ratio
IC/IF
VCE = 2 V, IF = 10 mA
2.5
⎯
50
%
Collector-emitter saturation
voltage
VCE (sat)
IF = 20 mA, IC = 0.25 mA
⎯
0.1
0.4
V
Rise time
tr
⎯
15
50
Fall time
tf
VCE = 5 V, IC = 1 mA, RL = 1 kΩ
(Note 3)
⎯
15
50
μs
Note 3 : Switching time measurement circuit and waveform
Precautions
• When removing flux with chemicals after soldering, clean only the leads on the soldering side; do not dip the
whole package for cleaning.
Chemicals remaining on an LED or photo transistor light emitter or receiver, if any, would have a bad influence
to the optical characteristics and it may severely lower the conversion efficiency.
• Care must be taken in relation to the environment in which the device is to be installed. Oil or chemicals may
cause the package to melt or crack.
• The device should be mounted on an unwarped surface.
• Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a
circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion
efficiency to fluctuation in infrared LED optical output is 1:1.
IC/IF (t)
IC/IF (0)
=
Po (t)
Po (0)
VCC
VOUT
RL
IF
VOUT
IF
tr
90%
10%
tf
td
ts



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