BCP56H_SER

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Product data sheet

Rev. 1 — 23 November 2016

3 of 16

Nexperia

BCP56H series

80 V, 1 A NPN medium power transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

[3]

[4]

Device mounted on an FR4 PCB, 4-layer copper; tin-plated and standard footprint.

[5]

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

100

V

collector-emitter voltage

open base

-

80

V

emitter-base voltage

open collector

-

7

V

collector current

-

1

A

peak collector current

single pulse;

-2

A

base current

-

0.2

A

peak base current

single pulse;

-0.3

A

total power dissipation

[1] -725

mW

[2] -1.2

W

[3] -1.5

W

[4] -1.6

W

[5] -2.2

W

junction temperature

-

+175

C

ambient temperature

55

+175

C

storage temperature

65

+175

C