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TMCS1100 Datasheet(PDF) 8 Page - Texas Instruments |
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TMCS1100 Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 50 page  8 TMCS1100 SBOS820A – SEPTEMBER 2019 – REVISED JUNE 2020 www.ti.com Product Folder Links: TMCS1100 Submit Documentation Feedback Copyright © 2019–2020, Texas Instruments Incorporated (1) Centered parameter based on TMCS1100EVM PCB layout. See Layout section. Device must be operated below maximum junction temperature. (2) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more details. (3) Excludes effect of external magnetic fields. See the Accuracy Parameters section for details to calculate error due to external magnetic fields. (4) RTI = referred-to-input. Output voltage is divided by device sensitivity to refer signal to input current. See the Parameter Measurement Information section. 7.9 Electrical Characteristics at TA = 25°C, VS = 5 V, VREF = 2.5 V (unless otherwise noted) PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT OUTPUT Sensitivity(1) TMCS1100A1 50 mV/A TMCS1100A2 100 mV/A TMCS1100A3 200 mV/A TMCS1100A4 400 mV/A Sensitivity error 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC ±0.2% ±0.7% Sensitivity error, including lifetime and environmental drift (2) 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC -0.47% ±1.02% Sensitivity error 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to +85ºC ±0.4% ±0.85% 0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to +125ºC ±0.5% ±1.15% Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.05% VOE Output voltage offset error(3) TMCS1100A1 ±0.4 ±3 mV TMCS1100A2 ±0.6 ±5 mV TMCS1100A3 ±0.8 ±8 mV TMCS1100A4 ±2.2 ±19 mV Output voltage offset drift TMCS1100A1, TA= –40ºC to +125ºC ±3.7 ±12 µV/ ℃ TMCS1100A2, TA= –40ºC to +125ºC ±4 ±19 µV/ ℃ TMCS1100A3, TA= –40ºC to +125ºC ±8.2 ±35 µV/ ℃ TMCS1100A4, TA= –40ºC to +125ºC ±26 ±138 µV/ ℃ IOS Offset error, RTI(3)(4) TMCS1100A1 ±8 ±60 mA TMCS1100A2 ±6 ±50 mA TMCS1100A3 ±4 ±40 mA TMCS1100A4 ±5.5 ±47.5 mA Offset error temperature drift, RTI(4) TMCS1100A1, TA= –40ºC to +125ºC ±74 ±240 µA/°C TMCS1100A2, TA= –40ºC to +125ºC ±40 ±190 µA/°C TMCS1100A3, TA= –40ºC to +125ºC ±41 ±175 µA/°C TMCS1100A4, TA= –40ºC to +125ºC ±65 ±345 µA/°C PSRR Power-supply rejection ratio TMCS1100A1,A2,A3, VS = 3 V to 5.5 V, VREF = VS/2, TA= –40ºC to +125ºC ±1 ±2 mV/V TMCS1100A4, VS = 4.5 V to 5.5 V, VREF = VS/2, TA= –40ºC to +125ºC ±1 ±3 mV/V CMTI Common mode transient immunity 50 kV/µs CMRR Common mode rejection ratio, RTI(4) DC to 60Hz 5 uA/V RVRR Reference voltage rejection ratio, output referred VREF = 0.5 V to 4.5 V, TMCS1100A1,A2,A3 1 3.5 mV/V VREF = 0.5 V to 4.5 V, TMCS1100A4 1.5 8 mV/V Noise density, RTI(4) TMCS1100A1 380 μA/√Hz TMCS1100A2 330 μA/√Hz TMCS1100A3 300 μA/√Hz TMCS1100A4 225 μA/√Hz INPUT RIN Input conductor resistance IN+ to IN– 1.8 m Ω Input conductor resistance temperature drift TA= –40ºC to +125ºC 4.4 μΩ/°C G Magnetic coupling factor TA= 25ºC 1.1 mT/A |
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