80N08G-TA3-R datasheet(2/8 Pages) VBSEMI

2 / 8 page

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

VDS Temperature Coefficient

V

DS/TJ

ID = 250 μA

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

- 6.1

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

3.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, VGS = 0 V

μA

VDS = 80 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currenta

ID(on)

VDS  5 V, VGS = 10 V

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 20 A

0.0065



VGS = 6 V, ID = 15 A

0.0070

VGS = 4.5 V, ID = 10 A

0.0085

Forward Transconductancea

gfs

VDS = 10 V, ID = 20 A

Dynamicb

Input Capacitance

Ciss

VDS = 40 V, VGS = 0 V, f = 1 MHz

3855

Output Capacitance

Coss

1120

Reverse Transfer Capacitance

Crss

376

Total Gate Charge

VDS = 40 V,VGS = 10 V, ID = 10 A

35.5

VDS = 40 V, VGS = 6 V, ID = 10 A

VDS = 40 V,VGS = 4.5 V, ID = 10 A

Gate-Source Charge

Qgs

5.3

Gate-Drain Charge

Qgd

7.3

Output Charge

Qoss

VDS = 40 V, VGS = 0 V

Gate Resistance

f = 1 MHz

0.5

1.3



Turn-On Delay Time

td(on)

VDD = 40 V, RL = 4 

ID  10 A, VGEN = 10 V, Rg = 1 

Rise Time

816

Turn-Off DelayTime

td(off)

Fall Time

714

Turn-On Delay Time

td(on)

VDD = 40 V, RL = 4 

ID  10 A, VGEN = 6.0 V, Rg = 1 

Rise Time

Turn-Off DelayTime

td(off)

Fall Time

816

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

Pulse Diode Forward Current (t = 100 μs)

ISM

150

Body Diode Voltage

VSD

IS = 5 A

0.76

1.1

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

Reverse Recovery Rise Time

www.VBsemi.tw

E-mail：China@VBsemi TEL:86-755-83251052

80N08G-TA3-R

80N08G-TA3-R Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd

80N08G-TA3-R Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL